RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory
نویسندگان
چکیده
منابع مشابه
A Survey of 3D Nand Flash Memory
Nand flash memory is an important part of the electronics products. Over the years scientists and engineers have worked hard to make it faster and cost effective. Recently, there has been a realization that current technologies is not capable of further increasing their capacity and at the same time keep the cost down. Keeping in view this limit and the ever increasing need for Nand flash memor...
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With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...
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Triple-Level Cell (TLC) NAND Flash memory at, and below, 20nm (nanometer) is still largely unexplored by researchers, and with the ever more commonplace existence of Flash in consumer and enterprise applications there is a need for such gaps in knowledge to be filled. At the time of writing, there was little published data or literature on TLC, and more specifically reliability testing, with a ...
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NAND flash memories are the most important storage media in mobile computing and tend to be less confined to this area. Nevertheless, it is not mature enough to allow a widespread use. This is due to poor write operations' performance caused by its internal intricacies. The major constraint of such a technology is the reduced number of erases operations which limits its lifetime. To cope with t...
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In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all-around (GAA) cell devices—against architectures that are based on planar cell devices. The differences and similarities between the two classes of a...
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2909567